Browsing B6 – LU institūti un aģentūras / Institutes and agencies of the UL by Subject "Defects"

Now showing items 1-3 of 3

    • Band Gap Engineering and Trap Depths of Intrinsic Point Defects in RAlO3 (R = Y, La, Gd, Yb, Lu) Perovskites 

      Zhydachevskyy, Yaroslav; Hizhnyi, Yuriy; Nedilko, Sergii G.; Kudryavtseva, Irina; Pankratov, Vladimir; Stasiv, Vasyl; Vasylechko, Leonid; Sugak, Dmytro; Lushchik, Aleksandr; Berkowski, Marek; Suchocki, Andrzej; Klyui, Nickolai (American Chemical Society, 2021)
      The possibility of band gap engineering (BGE) in RAlO3(R = Y, La, Gd, Yb, Lu) perovskites in the context of trap depths of intrinsic point defects was investigated comprehensively using experimental and theoretical approaches. ...

    • Effect of Ga content on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals 

      Grigorjeva, Larisa; Kamada, Kei; Nikl, Martin; Yoshikawa, Akira; Zazubovich, Svetlana G.; Zolotarjovs, Aleksejs (Elsevier B.V., 2018)
      Luminescence characteristics of Ce3+ - doped Gd3GaxAl5-xO12 single crystals with different Ga contents (x = 1, 2, 3, 4, 5) are studied in the 9–500 K temperature range. The spectra of the afterglow, photoluminescence, ...

    • Structural and electronic properties of β-NaYF4 and β-NaYF4:Ce3+ 

      Platonenko, Aleksandr; Popov, Anatoli (Elsevier B.V., 2020)
      In this work, the density functional theory approach with linear combination of atomic orbitals (LCAO) as implemented in the CRYSTAL17 computer code is applied to hexagonal β-NaYF4, located in three possible space groups ...