AlGaN cieto šķīdumu slāņu struktūru termoaktivācijas spektroskopija
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Latvijas Universitāte
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Abstract
Darba mērķis bija izpētīt alumīnija gallija nitrīdu (AlGaN) cieto šķīdumu slāņu struktūru defektu/piemaisījumu termiskās aktivācijas parametrus, tādus, kā vidējā termiskā aktivācijas enerģija un vidējais frekvenču faktors. Tas tika veikts, izmantojot termoaktivācijas spektroskopijas metodes – termostimulētā luminiscence (TSL) un frakcionēta termoizspīdināšanas tehnika (Fractional Glow Technique – FGT).
Šī darba ideja ir radusies tādēļ, ka apskatītā literatūrā ir maz vai vispār nav apskatīti GaN un AlGaN cieto šķīdumu seklo donoru parametri.
Darba teorētiskajā daļā ir apskatītā pusvadītāju gaismas absorbcijas un emisijas mehānismi, ka arī dots teorētiskais pamatojums TSL un FGT metodēm.
The aim of this work is to characterize aluminum gallium nitride (AlGaN) alloy heterostructure defects/impurities thermal activation parameters. Such parameters are mean defect level activation energy and mean frequency factor. These parameters are calculated from data collected from the thermostimulated luminescence (TSL) and the fractional glow technique (FGT). The idea of this work is to find more information on the shallow defects/impurities thermal characteristics in GaN and AlGaN using TSL and FGT, because of the poor information availability in literature. In the theoretical part of the work the information on the semiconductors light absorption and emission is given. Also TSL and FGT theoretical principles are described.
The aim of this work is to characterize aluminum gallium nitride (AlGaN) alloy heterostructure defects/impurities thermal activation parameters. Such parameters are mean defect level activation energy and mean frequency factor. These parameters are calculated from data collected from the thermostimulated luminescence (TSL) and the fractional glow technique (FGT). The idea of this work is to find more information on the shallow defects/impurities thermal characteristics in GaN and AlGaN using TSL and FGT, because of the poor information availability in literature. In the theoretical part of the work the information on the semiconductors light absorption and emission is given. Also TSL and FGT theoretical principles are described.