Slāņainu grafēns/Bi2Se3 struktūru sintēze
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Latvijas Universitāte
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lav
Abstract
Darbā uz elektroķīmiski pulētām vara pamatnēm tika sintezēts ķīmisko tvaiku nogulsnēts grafēns. Optimizēta grafēna pārnešanas procedūra, veicot grafēna pārnešanas procesā izmantotā poli(metilmetakrilāta) šķīdināšanu etiķskābes šķīdumos. Tika pārbaudīta grafēna kvalitāte pirms un pēc pārnešanas uz nevadošam pamatnēm izmantojot Ramana spektroskopiju, elektrovadītspējas mērījumiem un apskati skenējošā elektronu mikroskopā. Darbā ir izstrādāta horizontālu un dažādos leņķos orientētu bismuta selenīda nanostruktūru uz grafēna virsmas sintēzes metode. Ir noteikts iegūto slāņaino grafēns/Bi2Se3 struktūru termoelektriskais un fotoelektriskais efekts.
In this work chemical vapor deposited graphene was synthesized on electrochemically polished copper substrates. Optimal concentration of acetic acid and time of dissolution of poly(methylmetacrylate), used for the graphene transfer, were determined. Quality of graphene before and after transfer on non-conductive substrates was checked using Raman spectroscopy, conductivity measurements and scanning electron microscopy. In this work synthesis of bismuth selenide nanostructured coatings with stoichiometric composition and high crystallinity on graphene surface and thermoelectric properties of obtained graphene/Bi2Se3 structures was studied.
In this work chemical vapor deposited graphene was synthesized on electrochemically polished copper substrates. Optimal concentration of acetic acid and time of dissolution of poly(methylmetacrylate), used for the graphene transfer, were determined. Quality of graphene before and after transfer on non-conductive substrates was checked using Raman spectroscopy, conductivity measurements and scanning electron microscopy. In this work synthesis of bismuth selenide nanostructured coatings with stoichiometric composition and high crystallinity on graphene surface and thermoelectric properties of obtained graphene/Bi2Se3 structures was studied.