Now showing items 1-3 of 3

    • Ab-Initio Calculations of Oxygen Vacancy in Ga2O3 Crystals 

      Usseinov, A.; Koishybayeva, Zh.; Platonenko, Aleksandrs; Akilbekov, A.; Purans, Juris; Pankratov, Vladimir; Suchikova, Y.; Popov, Anatoli I. (Sciendo, 2021)
      Gallium oxide β-Ga2O3 is an important wide-band gap semiconductor. In this study, we have calculated the formation energy and transition levels of oxygen vacancies in β-Ga2O3 crystal using the B3LYP hybrid exchange-correlation ...
    • Accumulation of radiation defects and modification of micromechanical properties under MgO crystal irradiation with swift 132Xe ions 

      Baubekova, G.; Akilbekov, A.; Feldbach, E.; Grants, Rolands; Manika, Ilze P.; Popov, Anatoli I.; Schwartz, K.; Vasil'Chenko, Evgeni A.; Zdorovets, Maxim V.; Lushchik, Aleksandr Ch (Elsevier B.V., 2020)
      Accumulation of F-type defects under irradiation of MgO crystals by 0.23-GeV 132Xe ions with fluence varying by three orders of magnitude has been investigated via the spectra of optical absorption and low-temperature ...
    • Luminescence of F2 and F3 + centres in LiF crystals irradiated with 12 MeV 12C ions 

      Akilbekov, A.; Dauletbekova, A.; Kirilkin, N.; Baizhumanov, M.; Seitbayev, A.; Karipbayev, Zh.; Giniyatova, Sh.; Zabels, Roberts (Institute of Physics Publishing, 2018)
      Dependences of the nanohardness and photoluminescence of F 2 and F 3 + centers on the depth in LiF crystals irradiated with 12 MeV 12 C ions to fluences 10 10 -10 15 ions/cm 2 were studied using laser scanning confocal ...