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Characterization of crystalline structure and morphology of Ga2O3 thin film grown by MOCVD technique

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Autor
Kjapsna, Alvars
Dimitrocenko, Lauris
Tale, Ivars
Trukhin, Anatoly
Ignatans, Reinis
Grants, Rolands
Datum
2017
Metadata
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Zusammenfassung
Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.
URI
https://dspace.lu.lv/dspace/handle/7/52591
DOI
10.4028/www.scientific.net/KEM.721.253
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  • Raksti konferenču krājumā un tēzes (CFI) / Conference Papers and Abstracts [31]

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