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dc.contributor.authorPopov, Anatoli I.
dc.contributor.authorKotomin, Eugene A.
dc.contributor.authorMaier, Joachim
dc.date.accessioned2020-10-02T11:10:31Z
dc.date.available2020-10-02T11:10:31Z
dc.date.issued2017
dc.identifier.issn0167-2738
dc.identifier.urihttps://dspace.lu.lv/dspace/handle/7/52630
dc.descriptionSupport from Latvian National Research Program IMIS2 (2014–2017) and LZP Grant No. 237/2012 (2013–2016) is greatly appreciated.en_US
dc.description.abstractThe small radius hole polarons (self-trapped holes (STH) known also as the Vk centers) are very common color centers observed in numerous alkali halides and alkaline-earth halides. Their mobility controls the rate of secondary reactions between electron and hole defects and thus radiation stability/sensitivity of materials. We have analysed here the correlation between the temperatures at which hole polarons start migration in a series of alkali halides (fluorites, chlorides, bromides, iodides) and the lattice displacement around quasi-molecule. These results are especially important for identification of the self-trapped holes, for example, in novel scintillating materials such as SrI2, as well as in a large family of perovskite halides and more complex halide materials.en_US
dc.description.sponsorshipIMIS2; LZP Grant No. 237/2012; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART²en_US
dc.language.isoengen_US
dc.publisherElsevier B.V.en_US
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/739508/EU/Centre of Advanced Material Research and Technology Transfer/CAMART²en_US
dc.relation.ispartofseriesSolid State Ionics;302
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectResearch Subject Categories::NATURAL SCIENCES:Physicsen_US
dc.titleAnalysis of self-trapped hole mobility in alkali halides and metal halidesen_US
dc.typeinfo:eu-repo/semantics/articleen_US
dc.identifier.doi10.1016/j.ssi.2016.12.004


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