Red and Near Infra-red Persistent Luminescence of Transition Metal Activated Germanate Materials
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Latvijas Universitāte
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eng
Abstract
Darbs veltīts jaunu sarkanā un tuvā infrasarkanā spektra diapazonā emitējošu ilgspīdošu materiālu MgGeO3: Cr3+ un Mg2Si1-xGexO4: Mn sintēzei un analīzei, kā arī iepriekš zināma materiāla MgGeO3: Mn2+ pēcspīdēšanas īpašību uzlabošanai. Īpaša uzmanība tika veltīta lādiņnesēju ķērājcentru īpašībām un to ietekmei uz pēcspīdēšanas procesu. Tika secināts, ka MgGeO3: Mn2+ materiālā pēc apstarošanas ar UV starojumu parādās diskrēti ķērājcentri, un sintēze reducējošā atmosfērā palielina seklo ķērājcentru koncentrāciju. MgGeO3: Cr3+ gadījumā var runāt par ķērājcentru nepārtraukto sadalījumu, savukārt, Mg2Si1-xGexO4: Mn materiālos tika konstatēta abu tipu ķērājcentru klātbūtne. Apkopojot rezultātus, tika izdarīti secinājumi par ilgstošās pēcspīdēšanas mehānismiem un ķērājcentru īpašībām MgGeO3: Mn2+, MgGeO3: Cr3+ un Mg2Si1-xGexO4: Mn materiālos
This work is devoted to the synthesis and analysis of novel red and near infra-red emitting persistent phosphors MgGeO3: Cr3+ and Mg2Si1-xGexO4: Mn and improvement of properties of already known phosphor MgGeO3: Mn2+. Special attention was paid to the trap properties and their impact on the persistent luminescence mechanism. There are several discrete trap levels in the case of MgGeO3: Mn2+, and the synthesis in reducing atmosphere raise the concentration of shallow traps. In the case of MgGeO3: Cr3+, a continuous trap distribution is present. In Mg2Si1-xGexO4: Mn materials, the presence of both types of traps, discrete and continuous, were detected. Summarising the results, conclusions are drawn about the mechanisms of persistent luminescence and trap properties of MgGeO3: Mn2+, MgGeO3: Cr3+ and Mg2Si1-xGexO4: Mn materials.
This work is devoted to the synthesis and analysis of novel red and near infra-red emitting persistent phosphors MgGeO3: Cr3+ and Mg2Si1-xGexO4: Mn and improvement of properties of already known phosphor MgGeO3: Mn2+. Special attention was paid to the trap properties and their impact on the persistent luminescence mechanism. There are several discrete trap levels in the case of MgGeO3: Mn2+, and the synthesis in reducing atmosphere raise the concentration of shallow traps. In the case of MgGeO3: Cr3+, a continuous trap distribution is present. In Mg2Si1-xGexO4: Mn materials, the presence of both types of traps, discrete and continuous, were detected. Summarising the results, conclusions are drawn about the mechanisms of persistent luminescence and trap properties of MgGeO3: Mn2+, MgGeO3: Cr3+ and Mg2Si1-xGexO4: Mn materials.