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dc.contributor.authorAvotina, Liga
dc.contributor.authorGoldmane, Annija Elizabete
dc.contributor.authorVanags, Edgars
dc.contributor.authorTrimdale-Deksne, Aija
dc.contributor.authorBumbure, Lada
dc.contributor.authorRomanova, Marina
dc.contributor.authorSorokins, Hermanis
dc.contributor.authorMuhin, Alexei
dc.contributor.authorZaslavskis, Aleksandrs
dc.contributor.authorKizane, Gunta
dc.contributor.authorDekhtyar, Yuri
dc.date.accessioned2024-03-15T16:16:18Z
dc.date.available2024-03-15T16:16:18Z
dc.date.issued2023
dc.identifier.issn1392–1320
dc.identifier.urihttps://matsc.ktu.lt/index.php/MatSc/article/view/32082
dc.identifier.urihttps://dspace.lu.lv/dspace/handle/7/65472
dc.description.abstractIn the divertor of the tokamak type fusion reactors tungsten and tungsten-covered plasma facing materials are currently among the selected materials. However, metallic, high-Z plasma facing materials require plasma mitigation. Recent researches show, that mitigation with boron can be used for optimizing plasma operations, while the interactions between boron containing plasma and tungsten plasma facing materials are less investigated. The formation of mixed layers and their behaviour under plasma operations as well as reactor maintenance procedures needs to be estimated. In order to estimate properties of tungsten-boron mixed layers, such layers can be produced by deposition methods, such as the magnetron sputtering technique and further characterized and analysed. Magnetron sputtered tungsten-boron films were oxidized up to 600 °C. Prior and after thermal treatment infrared spectra and electron microscopy images of the films were registered. For comparison, W films with no addition B of were deposited. Selected parts of the films were etched, to analyse temperature dependent edge effects. Mass changes at ~ 400 – 500 °C can be attributed to the corresponding oxidation processes. The structure analysis and infrared spectrometry show the formation of W-O and W=O bonds. The obtained results will be applied for recommendations for the production of W-B thin films for microelectronic devices.en_US
dc.description.sponsorshipThe research is supported by the ERDF project No. 1.1.1.1/20/A/109 «Planar field emission microtriode structure». Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No.739508, project CAMART2.en_US
dc.language.isoengen_US
dc.publisherKaunas University of Technologyen_US
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/739508/EU/Centre of Advanced Material Research and Technology Transfer/CAMART²en_US
dc.relation.ispartofseriesMATERIALS SCIENCE (MEDŽIAGOTYRA);29 (3)
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectResearch Subject Categories::NATURAL SCIENCES::Physicsen_US
dc.subjecttungstenen_US
dc.subjecttungsten borideen_US
dc.subjectthermal analysisen_US
dc.subjectstructural changesen_US
dc.titleCharacterization of Structural Stability of Magnetron Sputtered Tungsten-boron Thin Films at Elevated Temperaturesen_US
dc.typeinfo:eu-repo/semantics/articleen_US
dc.identifier.doi10.5755/j02.ms.32082


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