Co-doping with boron and nitrogen impurities in T-carbon

Abstract

Previously, Ren et al. [Chem. Phys. 518, 69–73, 2019] reported the failure of Boron-Nitrogen (B-N) co-doping as inter B-N bond in T-carbon. In present work, a B-N atom pair is introduced in T-carbon as p-n co-dopant to substitute two carbon atoms in the same carbon tetrahedron and form an intra B-N bond. The stability of this doping system is verified from energy, lattice dynamic, and thermodynamic aspects. According to our B3PW calculations, B-N impurities in this situation can reduce the band gap of T-carbon from 2.95 eV to 2.55 eV, making this material to be a promising photocatalyst. Through the study of its transport properties, we can also conclude that B-N co-doping cannot improve the thermoelectric performance of T-carbon.