Vara pamatnes apstrāde ķīmisko tvaiku nogulsnēta grafēna elektrovadošo īpašību uzlabošanai
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Latvijas Universitāte
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Abstract
Darbā ir apkopota literatūra par vara substrātu, tā priekšapstrādes metodēm un to ietekmi uz ķīmisko tvaiku nogulsnēta grafēnu, Holla efektu. Vara substrāti tika priekš-apstrādāti ar dažādam metodēm: priekš-atkvēlināti, ķīmiski un elektroķīmiski pulēti. Vara graudu lielumi, pēc grafēna sintēzes uz vara substrātiem, tika aprēķināti, apstrādājot skenējošā elektronu un optiskā mikroskopa attēlus. Vara starpgraudu robežu dziļumi un vara virsmas raupjums tika noteikts ar atomspēku mikroskopu. Darbā parādīta iegūto grafēna paraugu lādiņu nesēju kustīguma un īpatnējās pretestības atkarībā no substrāta apstrādes veida.
In this work literature about influence of copper substrate and its pre-treatment on quality and Hall effect of chemical vapor deposited graphene was summarized. Copper substrates were pre-treated by different methods: pre-annealed, chemically and electrochemically polished. Areas of copper grains, after graphene synthesis on copper substrates, were determined by calculation from scanning electron and optical microscope images. Depth of copper grain boundaries and surface roughness were determined by atomic force microscope. The charge carrier mobility and resistivity of graphene were compared depend on substrate pre-treatment.
In this work literature about influence of copper substrate and its pre-treatment on quality and Hall effect of chemical vapor deposited graphene was summarized. Copper substrates were pre-treated by different methods: pre-annealed, chemically and electrochemically polished. Areas of copper grains, after graphene synthesis on copper substrates, were determined by calculation from scanning electron and optical microscope images. Depth of copper grain boundaries and surface roughness were determined by atomic force microscope. The charge carrier mobility and resistivity of graphene were compared depend on substrate pre-treatment.