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Accumulation of radiation defects and modification of micromechanical properties under MgO crystal irradiation with swift 132Xe ions
(Elsevier B.V., 2020)
Accumulation of F-type defects under irradiation of MgO crystals by 0.23-GeV 132Xe ions with fluence varying by three orders of magnitude has been investigated via the spectra of optical absorption and low-temperature ...
Investigation of the Efficiency of Shielding Gamma and Electron Radiation Using Glasses Based on TeO2-WO3-Bi2O3-MoO3-SiO to Protect Electronic Circuits from the Negative Effects of Ionizing Radiation
(MDPI, 2022)
This article considers the effect of MoO3 and SiO additives in telluride glasses on the shielding characteristics and protection of electronic microcircuits operating under conditions of increased radiation background or ...
Study of the Effect of Two Phases in Li4SiO4–Li2SiO3 Ceramics on the Strength and Thermophysical Parameters
(MDPI, 2022)
The paper studies the effect of Li2SiO3/Li4SiO4 phase formation in lithium-containing ceramics on the strength and thermophysical characteristics of lithium-containing ceramics, which have great prospects for use as blanket ...
Study of the Influence of the Irradiation Flux Density on the Formation of a Defect Structure in AlN in the Case of the Effect of Overlapping of the Heavy Ion Motion Trajectories in the Near-Surface Layer
(MDPI, 2023)
The aim of this paper is to test the previously stated hypothesis and several experimental facts about the effect of the ion flux or ion beam current under irradiation with heavy ions on the radiation damage formation in ...
Investigation of the Effect of PbO Doping on Telluride Glass Ceramics as a Potential Material for Gamma Radiation Shielding
(MDPI, 2023)
The purpose of this paper is to study the effect of PbO doping of multicomponent composite glass-like ceramics based on TeO2, WO3, Bi2O3, MoO3, and SiO2, which are one of the promising materials for gamma radiation shielding. ...
Improvement of β-SiC Synthesis Technology on Silicon Substrate
(MDPI, 2023)
This article presents an enhanced method for synthesizing β-SiC on a silicon substrate, utilizing porous silicon as a buffer layer, followed by thermal carbide formation. This approach ensured strong adhesion of the SiC ...