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Effect of Ga content on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals
(Elsevier B.V., 2018)
Luminescence characteristics of Ce3+ - doped Gd3GaxAl5-xO12 single crystals with different Ga contents (x = 1, 2, 3, 4, 5) are studied in the 9–500 K temperature range. The spectra of the afterglow, photoluminescence, ...
On low-temperature luminescence quenching in Gd3(Ga,Al)5O12:Ce crystals
(Elsevier B.V., 2019)
Temperature dependences of the photoluminescence and X-ray excited luminescence intensity and thermally stimulated luminescence glow curves are measured in the 4.2–300 K temperature range for the undoped and Ce3+ - doped ...