dc.contributor.author | Khartsev, Sergey I. | |
dc.contributor.author | Nordell, Nils | |
dc.contributor.author | Hammar, Mattias | |
dc.contributor.author | Purans, Juris | |
dc.contributor.author | Hállen, Anderson | |
dc.date.accessioned | 2020-11-16T06:44:39Z | |
dc.date.available | 2020-11-16T06:44:39Z | |
dc.date.issued | 2020 | |
dc.identifier.issn | 0370-1972 | |
dc.identifier.uri | https://dspace.lu.lv/dspace/handle/7/52908 | |
dc.description | The EU Horizon 2020 project CAMART2 is acknowledged for partly supporting the project, and the Ion Technology Centre, ITC, in Sweden is acknowledged for ion beam analysis (ERDA). | en_US |
dc.description.abstract | Pulsed laser ablation is used to form high-quality silicon-doped β-Ga2O3 films on sapphire by alternatively depositing Ga2O3 and Si from two separate sources. X-ray analysis reveals a single crystallinity with a full width at half maximum for the rocking curve around the (−201) reflection peak of 1.6°. Silicon doping concentration is determined by elastic recoil detection analysis (ERDA), and the best electrical performance is reached at a Si concentration of about 1 × 1020 cm−3, using optimized deposition parameters. It is found that a high crystalline quality and a mobility of about 2.9 cm2 (V s)−1 can be achieved by depositing Si and Ga2O3 from two separate sources. Two types of Schottky contacts are fabricated: one with a pure Pt and one with a PtOx composition. Electrical results from these structures are also presented. | en_US |
dc.description.sponsorship | Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART² | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Wiley-VCH Verlag | en_US |
dc.relation | info:eu-repo/grantAgreement/EC/H2020/739508/EU/Centre of Advanced Material Research and Technology Transfer/CAMART² | en_US |
dc.relation.ispartofseries | Physica Status Solidi (B) Basic Research;2000362 | |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | Research Subject Categories::NATURAL SCIENCES:Physics | en_US |
dc.subject | diodes | en_US |
dc.subject | fabrication | en_US |
dc.subject | gallium oxide | en_US |
dc.subject | pulsed laser deposition | en_US |
dc.subject | wide bandgap | en_US |
dc.title | High-Quality Si-Doped β-Ga2O3 Films on Sapphire Fabricated by Pulsed Laser Deposition | en_US |
dc.type | info:eu-repo/semantics/article | en_US |
dc.identifier.doi | 10.1002/pssb.202000362 | |