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Growth and characterization of PbI2-decorated ZnO nanowires for photodetection applications
(Elsevier B.V., 2020)
In this study, we demonstrated for the first time the growth of ZnO nanowires (NWs) decorated with highly crystalline few-layer PbI2 and fabricated two-terminal single-nanowire photodetector devices to investigate the ...
Effect of Ga content on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals
(Elsevier B.V., 2018)
Luminescence characteristics of Ce3+ - doped Gd3GaxAl5-xO12 single crystals with different Ga contents (x = 1, 2, 3, 4, 5) are studied in the 9–500 K temperature range. The spectra of the afterglow, photoluminescence, ...
Towards metal chalcogenide nanowire-based colour-sensitive photodetectors
(Elsevier B.V., 2018)
In recent years, nanowires have been shown to exhibit high photosensitivities, and, therefore are of interest in a variety of optoelectronic applications, for example, colour-sensitive photodetectors. In this study, we ...
On low-temperature luminescence quenching in Gd3(Ga,Al)5O12:Ce crystals
(Elsevier B.V., 2019)
Temperature dependences of the photoluminescence and X-ray excited luminescence intensity and thermally stimulated luminescence glow curves are measured in the 4.2–300 K temperature range for the undoped and Ce3+ - doped ...
Effect of Mg2+ ions co-doping on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals
(Elsevier B.V., 2017)
Photo- and radioluminescence and thermally stimulated luminescence characteristics of Ce³⁺ - doped and Ce³⁺, Mg²⁺ co-doped Gd3(Ga,Al)5O12 (GAGG) single crystals of similar composition are investigated in the 9–500 K ...